www.goodark.com page 1 of 4 rev.1.0 ssf 2301b 20v p-channel mosfet package marking and ordering information device marking device device package reel size tape width quantity 2301b SSF2301B sot23 ?180mm 8 mm 3000 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -20 v gate-source voltage v gs 8 v i d -2.8 a drain current-continuous@ current-pulsed (note 1) i dm -10 a maximum power dissipation p d 1.25 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristics thermal resistance,junction-to-ambient (note 2) r ja 100 /w general features v ds = -20v,i d = -2.8a r ds(on) < 150m @ v gs =-2.5v r ds(on) < 100m @ v gs =-4.5v high power and current handing capability lead free product surface mount package description the SSF2301B uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a load switch or in pwm applications. a pplications pwm applications load switch power management schematic d iagram marking and p in assignment sot23 t op v iew d g s
www.goodark.com page 2 of 4 rev.1.0 ssf 2301b 20v p-channel mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =-250a -20 v zero gate voltage drain current i dss v ds =-20v,v gs =0v -1 a gate-body leakage current i gss v gs =8v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =-250a -0.45 -1 v v gs =-4.5v, i d =-2.8a 80 100 drain-source on-state resistance r ds(on) v gs =-2.5v, i d =-2a 110 150 m forward transconductance g fs v ds =-5v,i d =-2.8a 9 s dynamic characteristics (note4) input capacitance c lss 1160 pf output capacitance c oss 210 pf reverse transfer capacitance c rss v ds =-10v,v gs =0v, f=1.0mhz 125 pf switching characteristics (note 4) turn-on delay time t d(on) 13.6 27.2 ns turn-on rise time t r 8.6 17.2 ns turn-off delay time t d(off) 73.6 147.2 ns turn-off fall time t f v dd =-10v,i d =-2.8a v gs =-4.5v,r gen =3 34.6 69.2 ns total gate charge q g 9.6 12.7 nc gate-source charge q gs 1.1 nc gate-drain charge q gd v ds =-10v,i d =-2.8a,v gs =-4.5v 2.6 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =-0.75a -1.2 v diode forward current (note 2) i s -2.8 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
www.goodark.com page 3 of 4 rev.1.0 ssf 2301b 20v p-channel mosfet typical electrical and thermal characteristics square wave pluse duration(sec) figure 3: normalized maximum transient thermal impedance v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms rgen vin g vdd rl vout s d vgs figure1: switching test circuit r(t),normalized effective transient thermal impedance
www.goodark.com page 4 of 4 rev.1.0 ssf 2301b 20v p-channel mosfet sot-23 package information dimensions in millimeters (unit: mm) dimensions in millimeters symbol min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8 notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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